DUBLIN--(BUSINESS WIRE)--The "GaN-on-Sapphire HEMT Power IC by Power Integrations" report has been added to ResearchAndMarkets.com's offering. The report provides an estimation of the production costs ...

Researchers at the Indian Institute of Science (IISc) have uncovered fundamental insights into designing gallium nitride (GaN ...

DUBLIN--(BUSINESS WIRE)--Research and Markets has announced the addition of the "GaN on Si HEMT vs SJ MOSFET: Technology and Cost comparison" report to their offering. The report proposes an in-depth ...

SEOUL, South Korea, Sept. 11, 2025 /PRNewswire/ -- DB HiTek, a leading 8-inch specialty foundry, today announced it is in the final stages of development of its 650V E-Mode GaN HEMT (Gallium Nitride ...

A particularly promising candidate for raising the ceiling that limits what’s possible is a variant of the nitride-based HEMT that utilises indium-based nitride semiconductors in the barrier layer – ...

High-electron-mobility transistor (HEMT) devices based on gallium nitride (GaN) offer superior electrical characteristics and are a valid alternative to MOSFETs and IGBTs in high-voltage and ...

Kawasaki, Japan, Dec. 09, 2003 — Fujitsu Laboratories Ltd. today announced that it has developed a gallium nitride (GaN) high electron mobility transistor (HEMT) amplifier which achieves the world's ...

Transphorm Inc. has unveiled reportedly the first 600 V GaN (Gallium Nitride)-based, low-profile PQFN products and expanded its product portfolio in the industry-standard TO220 packages. Transphorm ...

GaN power devices are expanding into various industries, including AI data centres, robotics, electric vehicles, renewable ...