Fifth generation technology improves the characteristics of fourth generation IGBT and (free-wheeling diode) FWD devices, both switching behavior and electrical losses are improved. Furthermore, an ...

New power modules with solderable pin terminals have changed the structure of inverters in applications up to 20kW. The new EconoPACK+ package was designed to fill the gap between 20kW and 100kW ...

Silicon carbide (SiC) power devices have been commercially available for ten years. During that time, there has been a steady increase in voltage ratings to 1,200 V and 1,700 V for SiC-Schottky diodes ...

This paper presents a novel 3-phase IGBT module called the SPM (Smart Power Module). This is a new design developed to provide a very compact, low cost, high perfor- mance and reliable motor drive ...

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Magnachip Semiconductor has concluded an agreement with Hyundai Mobis Company concerning the use of Insulated Gate Bipolar Transistor (IGBT) technology. Magnachip to develop IGBT business Credit: ...

Cambridge GaN Devices has patented a technique for lowering losses in 100kW+ IGBT-based vehicle traction drives, at lower cost than all-silicon-carbide inverters, it said. It involves connecting GaN ...

TOKYO--(BUSINESS WIRE)--Renesas Electronics Corporation (TSE: 6723), a premier supplier of advanced semiconductor solutions, announced the development of a new generation of Si-IGBTs (Silicon ...

SEOUL, South Korea, January 20, 2026--(BUSINESS WIRE)--Magnachip Semiconductor Corporation (NYSE: MX, "Magnachip") today announced the launch of its new series of Insulated Gate Bipolar Transistors ...

SEOUL, South Korea, November 03, 2025--(BUSINESS WIRE)--Magnachip Semiconductor Corporation (NYSE: MX) ("Magnachip" or the "Company") today announced it has concluded an agreement with Hyundai Mobis ...

Renesas Electronics has developed a new generation of Si-IGBTs (Silicon Insulated Gate Bipolar Transistors) which will be offered in a small footprint while providing low power losses. Aimed at next ...