The research team developed a plasma interface engineering method to improve indium tin oxide layers, solving adhesion, ...
Researchers at the University of Toronto, led by Dr. Amr S. Helmy, have developed a new method for integrating electro-optic SiO 2 /ITO heterointerfaces into metal–insulator–semiconductor (MIS) ...
Researchers in Spain have developed an n-type crystalline silicon solar cell based on vanadium oxide films deposited by atomic layer deposition. The cell showed an open-circuit voltage of 631 mV, a ...
The term "ALD" was first used around 2000. This technique achieves atomic layer control and conformal deposition through successive, self-limiting surface reactions. It involves introducing chemical ...
A research team, led by Professor Joonki Suh in the Department of Materials Science and Engineering and the Graduate School of Semiconductor Materials and Devices Engineering at UNIST, has made a ...
Anna Demming discovers why the vacuum-based technique of atomic-layer deposition – a variant of chemical-vapour deposition – holds so much promise for energy and environmental applications Greener ...
Atomic layer deposition (ALD) originated from atomic layer epitaxy, which was introduced in 1970 and initially used in electroluminescent displays. It rapidly revolutionized semiconducting ...
A research team, led by Professor Joonki Suh in the Department of Materials Science and Engineering and the Graduate School of Semiconductor Materials and Devices Engineering at UNIST, has made a ...
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