The IXDD609/IXDI609/IXDN609 high-speed gate drivers are especially well suited for driving the latest IXYS MOSFETs and IGBTs. The IXD_609 high-current output can source and sink 9A of peak current ...
If you are going to use a silicon carbide (SiC) MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) in your next development, you will ask yourself: how do I develop the best gate driver for it ...
The switching speed of a power MOSFET charge-controlled device depends on the speed with which an associated gate driver circuit can charge its input capacitance. For the last 20 years, many excellent ...
Scaling of the metal oxide semiconductor (MOS) field-effect transistor has been the basis of the semiconductor industry for nearly 30 years. Traditional materials have been pushed to their limits, ...
On Nov. 12, Intel shipped the first 45-nanometer microprocessors using high-k metal-gate technology. Whether to underscore the significance of the event or to reinforce that his famous law remains on ...