As the industry advances into the angstrom era, gate-all-around architectures combined with atomic-scale materials ...

Insulated Gate Bipolar Transistors (IGBTs) have become pivotal components in modern power electronic systems, blending the high input impedance and fast switching capabilities of MOSFETs with the high ...

WEST LAFAYETTE, Ind. — Quantum information processing promises to be much faster and more secure than what today’s supercomputers can achieve, but doesn’t exist yet because its building blocks, qubits ...

The operation of field‐effect transistors (FETs) critically depends on the performance of gate dielectrics, which act as the insulating medium between the gate electrode and the semiconducting channel ...

AI workloads are pushing the boundaries of compute, memory, and interconnect architectures, and to meet these goals, ...

Most transistors have three terminals, often labeled as emitter, base, and collector (in bipolar junction transistors) or source, gate, and drain (in field-effect transistors). Applying a small signal ...

“To improve transistor density and electronic performance, next-generation semiconductor devices are adopting three-dimensional architectures and feature sizes down to the few-nm regime, which require ...

From AI-powered processors to atomic-scale transistors, the world of microelectronics is continually being redefined by how small, how powerful, and how energy-efficient devices can become. Whether it ...